Method for producing distinct first and second active...

Details Method for producing distinct first and second active... Method for producing distinct first and second active...

2006-10-23

2009-12-01

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S199000, C438S219000, C438S311000, C257SE21561, C257S347000

Reexamination Certificate

active

07625811

ABSTRACT:
A method according to the invention enables first and second active zones to be produced on a front face of a support, which said zones are respectively formed by first and second monocrystalline semi-conducting materials that are distinct from one another and preferably have identical crystalline structures. The front faces of the first and second active zones also present the advantage of being in the same plane. Such a method consists in particular in producing the second active zones by a crystallization step of the second semi-conducting material in monocrystalline form, from patterns made of second semi-conducting material in polycrystalline and/or amorphous form and from interface regions between said patterns and preselected first active zones. Moreover, the support is formed by stacking of a substrate and of an electrically insulating thin layer, the front face of the electrically insulating thin layer forming the front face of the support.

REFERENCES:
patent: 4751561 (1988-06-01), Jastrzebski
patent: 5514885 (1996-05-01), Myrick
patent: 7439110 (2008-10-01), Cheng et al.
patent: 2002/0019105 (2002-02-01), Hattori et al.
patent: 2002/0140033 (2002-10-01), Bae et al.
patent: 2005/0104131 (2005-05-01), Chidambarrao et al.
Liu, Yaocheng et al., “MOSFETs and High-Speed Photodetectors on Ge-on-Insulator Substrates Fabricated using Rapid Melt Growth,” Center for Integrated Systems, XP010788979, pp. 1001-1004 (2004).
Liu, Yaocheng et al., “High-quality single-crystal Ge on insulator by liquid-phase epitaxy on substrates,” Applied Physics Letters, vol. 84, No. 14, pp. 2563-2565 (Apr. 2004).

Affiliated with

Also associated with

Rating

Method for producing distinct first and second active... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing distinct first and second active..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing distinct first and second active... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4073518