Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-09-03
1998-03-17
Dang, Trung
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438151, 438197, 438297, H01L 2100
Patent
active
057286094
ABSTRACT:
A method for producing contact holes in MOS integrated circuits by the SOI technique, with an oxide layer and a silicon layer above it, includes producing raised contact hole regions on an initially relatively thick silicon layer with a first mask in a first method step. A LOCOS insulation which is made with a second mask in a second method step is effected solely in a region that was thinned in the first method step.
REFERENCES:
patent: 4753896 (1988-06-01), Matloubian
patent: 5492857 (1996-02-01), Reedy et al.
Dang Trung
Greenberg Laurence A.
Lerner Herbert L.
Siemens Aktiengesellschaft
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