Method for producing chips from wafers of low thickness

Details Method for producing chips from wafers of low thickness Method for producing chips from wafers of low thickness

2006-04-04

2006-04-04

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

C438S460000, C438S464000, C438S033000

Reexamination Certificate

active

07022587

ABSTRACT:
A method for producing chips from a wafer of low thickness, in which the wafer has an active side on which integrated circuits are arranged in a grid with interspaces and a metallized backside facing away from the active side, the method preferably includes the steps of: coating the active side of the wafer with a protective coating; covering the active side with a mask having light-transmitting lines disposed along the interspaces between the integrated circuits, the mask being otherwise non-light transmitting, exposing the light-transmitting lines to light for producing exposed lines; etching away the exposed lines; producing trenches having depth from the exposed lines; removing the protective coating on the active side of the wafer, applying a carrier on the active side of the wafer; grinding the metallized backside of the wafer; removing the metallized backside by way of etching to a wafer thickness of about 20 microns greater than the depth of the trenches; removing the metallized backside to a base of the trenches; and, releasing the chips from the carrier.

REFERENCES:
patent: 6638865 (2003-10-01), Tanaka

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