Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Patent
1999-12-14
2000-11-14
Dang, Trung
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
438449, 438549, 438558, H01L 2176
Patent
active
061469769
ABSTRACT:
Bridged, doped zones are formed in a semiconductor. A silicon nitride layer is deposited and structured on a semi-conductor region with a predetermined dopant concentration. The structure is subjected to thermal oxidation, with the result that at least one oxide region and at least two oxide-free regions, which are separated from one another by the oxide region, are produced on the surface of the semiconductor region. A dopant is introduced into the oxide-free regions and driven into the semiconductor region. A coherent zone is thus produced in the semiconductor region with a dopant concentration at least ten times the dopant concentration of the semiconductor region. This produces a coherent zone having a high dopant concentration which is bridged by the oxide region which separates the oxide-free regions on the surface of the semiconductor region. Conductive layers, such as a polysilicon layer or a metal layer, for example, can be formed on the oxide region (oxide bridge), with the assurance the conductive layer is completely insulated from the doped zone.
REFERENCES:
patent: 2975637 (1961-03-01), Burdick
patent: 3606862 (1971-09-01), Huff et al.
patent: 3979941 (1976-09-01), Auxer
patent: 4034679 (1977-07-01), Gaither et al.
patent: 4244296 (1981-01-01), Vertut
patent: 5237194 (1993-08-01), Takahashi
patent: 5285689 (1994-02-01), Hapstack et al.
patent: 5300454 (1994-04-01), Taft et al.
patent: 5504788 (1996-04-01), Brooks et al.
patent: 5548147 (1996-08-01), Mei
patent: 5565633 (1996-10-01), Wernicke
patent: 5719421 (1998-02-01), Hutter et al.
patent: 5744391 (1998-04-01), Chen
patent: 5946577 (1999-08-01), Tanaka
Schade: Mikroelektroniktechnologie; Verlag Technik Berlin, 1991, pp. 430-431; pertains to a CMOS process.
Gutheit Tim
Schwetlick Werner
Stecher Matthias
Dang Trung
Greenberg Laurence A.
Infineon Technology AG
Lerner Herbert L.
Stemer Werner H.
LandOfFree
Method for producing bridged doped zones does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing bridged doped zones, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing bridged doped zones will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2064753