Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-05
2000-03-28
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257341, 257333, 257335, 257509, H01L 2978, H01L 2941
Patent
active
060435313
ABSTRACT:
Bridged, doped zones are formed in a semiconductor. A silicon nitride layer is deposited and structured on a semi-conductor region with a predetermined dopant concentration. The structure is subjected to thermal oxidation, with the result that at least one oxide region and at least two oxide-free regions, which are separated from one another by the oxide region, are produced on the surface of the semiconductor region. A dopant is introduced into the oxide-free regions and driven into the semiconductor region. A coherent zone is thus produced in the semiconductor region with a dopant concentration at least ten times the dopant concentration of the semiconductor region. This produces a coherent zone having a high dopant concentration which is bridged by the oxide region which separates the oxide-free regions on the surface of the semiconductor region. Conductive layers, such as a polysilicon layer or a metal layer, for example, can be formed on the oxide region (oxide bridge), with the assurance the conductive layer is completely insulated from the doped zone.
REFERENCES:
patent: 5237194 (1993-08-01), Takahashi
patent: 5548147 (1996-08-01), Mei
patent: 5719421 (1998-02-01), Hutter
Schade: Mikroelektroniktechnologie; Verlag Technik Berlin, 1991, pp. 430-431.
Gutheit Tim
Schwetlick Werner
Stecher Matthias
Greenberg Laurence A.
Jackson, Jr. Jerome
Lerner Herbert L.
Siemens Aktiengesellschaft
Stemer Werner H.
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