Method for producing annealed wafer and annealed wafer

Details Method for producing annealed wafer and annealed wafer Method for producing annealed wafer and annealed wafer

2005-10-12

2010-02-09

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C257SE21328

Reexamination Certificate

active

07659216

ABSTRACT:
The present invention is a method for producing an annealed wafer, wherein, at least, when a boat in which a semiconductor wafer is placed is inserted into a furnace tube, the boat is inserted along with introducing an inert gas into the furnace, so that entirety of the semiconductor wafer to be a product reaches a thermally uniform portion, then an insertion rate of the boat in which the semiconductor wafer is placed is decelerated and/or suspended, so that an interval between the furnace tube and the shutter is maintained for a predetermined time, and then the furnace tube is blocked in with the shutter. Thereby, there can be provided a method for producing an annealed wafer by which during the heat treatment, it can be more certainly prevented that the wafer is contaminated with conductive impurities and that thereby resistivity of the wafer is changed before and after the heat treatment.

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Uwe, “Horizontalofen Diffusion Cesar-Geratebefehlsatz, Version 1.0”,Centrotherm Elektrischen Anlagen GMBH, Nov. 14, 2002, pp. 1-36.

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