Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2005-03-22
2005-03-22
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S048000, C438S051000, C438S117000
Reexamination Certificate
active
06869818
ABSTRACT:
A method for producing a corrosion-resistant channel in a wetted path of a silicon device enables such device to be used with corrosive compounds, such as fluorine. A wetted path of a MEMS device is coated with either (1) an organic compound resistant to attack by atomic fluorine or (2) a material capable of being passivated by atomic fluorine. The device is then exposed to a gas that decomposes into active fluorine compounds when activated by a plasma discharge. One example of such a gas is CF4, an inert gas that is easier and safer to work with than volatile gases like ClF3. The gas will passivate the material (if applicable) and corrode any exposed silicon. The device is tested in such a manner that any unacceptable corrosion of the wetted path will cause the device to fail. If the device operates properly, the wetted path is deemed to be resistant to corrosion by fluorine or other corrosive compounds, as applicable.
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Harris James M.
Patel Sapna
Law Office of Tina M. Lessani
Picardat Kevin M.
Redwood Microsystems, Inc.
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