Method for producing an n-doped field stop zone in a...

Details Method for producing an n-doped field stop zone in a... Method for producing an n-doped field stop zone in a...

2005-08-11

2009-02-17

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

C257SE21145

Reexamination Certificate

active

07491629

ABSTRACT:
A method for producing an n-doped field stop zone in a semiconductor body. The method includes carrying out a diffusion process for the indiffusion of sulfur, hydrogen or selenium proceeding from one side into the semiconductor body in order to produce a first n-doped semiconductor zone. A second n-doped semiconductor zone is produced in the first semiconductor zone, which is doped more highly than the first semiconductor zone. Additionally, a semiconductor component having a field stop zone is disclosed.

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Akio Nakagawa, et al. MOSFET-mode Ultra-Thin Wafer PTIGBTs for Soft Switching Application (4 pgs.), 2004.

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