Method for producing an epitaxial silicon single crystal wafer a

Details Method for producing an epitaxial silicon single crystal wafer a Method for producing an epitaxial silicon single crystal wafer a

1999-05-11

2000-12-19

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

438471, 438502, 438916, 148 33, H01L 2120

Patent

active

061627089

ABSTRACT:
There is disclosed a method for producing an epitaxial silicon single crystal wafer comprising the steps of growing a silicon single crystal ingot wherein nitrogen is doped by Czochralski method, slicing the silicon single crystal ingot to provide a silicon single crystal wafer, and forming an epitaxial layer in the surface layer portion of the silicon single crystal wafer. There can be manufactured easily and in high productivity an epitaxial silicon monocrystal wafer which has high gettering capability when a substrate having a low boron concentration is used, a low concentration of heavy metal impurity, and an excellent crystallinity.

REFERENCES:
patent: 5744380 (1998-04-01), Uemura et al.
F. Shimura et al., "Nitrogen effect on oxygen precipitation in Czochralski silicon", Appl. Phys. Lett. 48 (3) pp. 224-226, Jan. 1986.
Shimura, F. and R.S. Hockett, "Nitrogen Effect on Oxygen Precipitation in Czochralski Silicon," 1986 American Institute of Physics, App. Phys. Lett. 48 (3), Jan. 20, 1986, pp. 224-226.
Abe, Takao and Hiroshi Takeno, "Dynamic Behavior of Intrinsic Point Defects in FX an CZ Silicon Crystals," 1992 Materials Research Society, pp. 3-13. No Month.
Watanabe, et al., "Controlled oxygen doping in silicon", Japanese Journal of Applied Physics, Supplements, vol. 22, 1983, pp. 185-189. No Month.

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