Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1993-04-30
2000-03-07
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419212, C23C 1434
Patent
active
060335343
ABSTRACT:
A method for producing an Al-containing layer having a planar surface onto a substrate having hole structures with high aspect ratios formed in the surface of the substrate, wherein the Al-containing layer is applied in a sputtering process during which the substrate is held at an elevated temperature and the sputtering process is implemented at a pressure between 1.3.times.10.sup.-2 Pa and 13 Pa and at a low partial gas pressure. The substrate can be held at a temperature between approximately 400.degree. C. and 500.degree. C. during the sputtering process. A partial residual gas pressure of less than 1.3.times.10.sup.-5 PA can prevail in the vacuum. An intermediate layer of pure titanium and a barrier layer of TiN can be directly deposited onto the substrate and the Al-containing layer can then be applied onto this intermediate end barrier layer.
REFERENCES:
patent: 4409075 (1983-10-01), Kolbesen
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4874484 (1989-10-01), Froell et al.
patent: 4994162 (1991-02-01), Armstrong et al.
patent: 5093710 (1992-03-01), Higuchi
patent: 5108570 (1992-04-01), Wang
patent: 5162262 (1992-11-01), Ajika et al.
patent: 5171412 (1992-12-01), Talieh et al.
patent: 5209833 (1993-05-01), Froell et al.
Proc. of Int. IEEE VLSI Multilevel Interconnection Conf. 5 (1988) pp. 76-84.
L.D. Hartsough et al, "Aluminimum and Aluminimum Alloy Sputter Deposition for VLSI", Solid State Technology, pp. 66-72.
Proceedings of Teh Third International IEEE VLSI Multilevel Interconnection Conference, Jun. 9, 1986, Section 212-218.
Lehmann Volker
Wendt Hermann
Willer Josef
Nguyen Nam
Siemens Aktiengesellschaft
LandOfFree
Method for producing an Al-containing layer with a planar surfac does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing an Al-containing layer with a planar surfac, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing an Al-containing layer with a planar surfac will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-359351