Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-21
2005-06-21
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S330000, C257S331000, C257S327000, C438S259000, C438S270000, C438S589000, C438S212000
Reexamination Certificate
active
06909141
ABSTRACT:
A vertical semiconductor transistor component is built up on a substrate by using a statistical mask. The vertical semiconductor transistor component has vertical pillar structures statistically distributed over the substrate. The vertical pillar structures are electrically connected on a base side thereof to a first common electrical contact. The vertical pillar structures include, along the vertical direction, layer zones of differing conductivity, and have insulation layers on their circumferential walls. An electrically conductive material is deposited between the pillar structures and forms a second electrical contact of the semiconductor transistor component. The pillar structures are electrically contacted to a third common electrical contact on their capping side.
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Äugle Thomas
Franosch Martin
Risch Lothar
Rösner Wolfgang
Schäfer Herbert
Erdem Frazli
Flynn Nathan J.
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
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