Method for producing a vertical field effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE29262

Reexamination Certificate

active

07745875

ABSTRACT:
A method for producing a field effect transistor, in which a plurality of layers are in each case deposited, planarized and etched back, in particular a gate electrode layer, is disclosed. This method allows the manufacturing of transistors having outstanding electrical properties and having outstanding reproducibility.

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