Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2005-03-08
2005-03-08
Mills, Gregory (Department: 1763)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
Reexamination Certificate
active
06863832
ABSTRACT:
A method for producing a silicon torsion spring capable, for example, of reading the rotation rate in a microstructured torsion spring/mass system. The system that is produced achieves a low torsional stiffness compared to a relatively high transverse stiffness in the lateral and vertical directions. The method proceeds from a wafer or wafer composite and, upon suitable mask coverage, a spring with a V-shaped cross section is formed by anisotropic wet-chemical etching which preferably extends over the entire wafer thickness and is laterally delimited only by [111] planes. Two of the wafers or wafer composites prepared in this way are rotated through 180° and joined to one another oriented mirrorsymmetrically with respect to one another, so that overall the desired X-shaped cross section is formed.
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Billep Detlef
Breng Uwe
Handrich Eberhard
Hiller Karla
Rvrko Bruno
Culbert Roberts
Kramsky Elliott N.
LITEF GmbH
Mills Gregory
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