Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2011-05-31
2011-05-31
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C438S705000, C257SE21287, C257SE21570
Reexamination Certificate
active
07951691
ABSTRACT:
In a method for producing a thin film chip including an integrated circuit, a semi-conductor wafer having a first surface is provided. At least one cavity is produced under a defined section of the first surface by means of porous silicon. A circuit structure is produced in the defined section. The defined wafer section is subsequently released from the semiconductor wafer by severing local web-like connections, which hold the wafer section above the cavity and on the remaining semiconductor wafer.
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Appel Wolfgang
Burghartz Joachim N.
Zimmermann Martin
Harness & Dickey & Pierce P.L.C.
Institut fuer Mikroelektronik Stuttgart
Jefferson Quovaunda
Smith Matthew S
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