Method for producing a thin film transistor having improved carr

Details Method for producing a thin film transistor having improved carr Method for producing a thin film transistor having improved carr

1996-06-28

1998-03-17

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438158, H01L 2184

Patent

active

057286108

ABSTRACT:
A polycrystalline silicon film formed of an active layer of a thin film transistor is entirely hydrogenated by a low-temperature process, thereby lowering the resistance and relaxing the electric field in the vicinity of the drain to reduce the leakage current. A gate and an insulating film that covers it are formed on a substrate having an insulating surface. A hydrogenated polycrystalline silicon film is formed over the substrate, including the gate, with the insulating film interposed therebetween. A silicon oxide film pattern is formed on the polycrystalline silicon film directly above the gate. Source/drain regions are formed on the polycrystalline silicon film substantially at two external sides of the silicon oxide film pattern. The source/drain regions are formed from a hydrogen-containing amorphous silicon film, a conductive silicon film and a metal film, which are successively stacked on the polycrystalline silicon film. Accordingly, the hydrogen-containing amorphous silicon film functions as an offset region.

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English Abstract of JA-3-219643, JA-4-186634, JA-3-132074, JA-3-293731, and JA-4-206836.

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