Method for producing a tensioned layer on a substrate, and a...

Details Method for producing a tensioned layer on a substrate, and a... Method for producing a tensioned layer on a substrate, and a...

2004-04-08

2009-11-10

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C257S018000, C257S019000, C257S347000, C257S065000, C257SE29105, C257SE29107, C257SE29109, C257SE33043, C257SE21317, C117S007000, C438S938000, C438S311000, C438S530000

Reexamination Certificate

active

07615471

ABSTRACT:
The invention relates to a method for producing a tensioned layer on a substrate involving the following steps: producing a defect area in a layer adjacent to the layer to be tensioned, and; relaxing at least one layer adjacent to the layer to be tensioned. Additional layers can be epitaxially deposited. Layer structures formed in this manner are advantageously suited for components of all types.

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patent: WO 03/098664 (2003-11-01), None
patent: WO 2004/082001 (2004-09-01), None

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