Semiconductor device manufacturing: process – Making field effect device having pair of active regions...
Reexamination Certificate
2007-01-19
2009-06-09
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
C977S762000, C977S720000, C977S763000, C977S936000
Reexamination Certificate
active
07544547
ABSTRACT:
The invention relates to a method for producing a support comprising nanoparticles (22) for the growth of nanostructures (23), said nanoparticles being organised periodically, the method being characterised in that it comprises the following steps:providing a support comprising, in the vicinity of one of its surfaces, a periodic array of crystal defects and/or stress fields (18),depositing, on said surface, a continuous layer (20) of a first material capable of catalysing the nanostructure growth reaction,fractionating the first material layer (20) by a heat treatment so as to form the first material nanoparticles (22).
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Dijon Jean
Fournel Frank
Mur Pierre
Coleman W. David
Commissariat a l''Energie Atomique
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Scarlett Shaka
LandOfFree
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