Method for producing a structure on the surface of a substrate

Details Method for producing a structure on the surface of a substrate Method for producing a structure on the surface of a substrate

2011-08-23

2011-08-23

Norton, Nadine G (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S673000, C438S689000, C438S595000, C438S696000, C257S622000, C257S797000, C257S798000

Reexamination Certificate

active

08003538

ABSTRACT:
The present invention relates to a method for producing a structure serving as an etching mask on the surface of a substrate. In this case, a first method involves forming a first partial structure on the surface of the substrate, which has structure elements that are arranged regularly and are spaced apart essentially identically. A second method involves forming spacers on the surface of the substrate, which adjoin sidewalls of the structure elements of the first partial structure, cutouts being provided between the spacers. A third method step involves introducing filling material into the cutouts between the spacers, a surface of the spacers being uncovered. A fourth method step involves removing the spacers in order to form a second partial structure having the filling material and having structure elements that are arranged regularly and are spaced apart essentially identically. The structure to be produced is composed of the first partial structure and the second partial structure.

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German Office Action dated Feb. 4, 2005, directed to counterpart German application.

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