Method for producing a strained layer on a substrate and...

Details Method for producing a strained layer on a substrate and... Method for producing a strained layer on a substrate and...

2004-04-15

2008-08-26

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S492000, C257SE21561

Reexamination Certificate

active

07416965

ABSTRACT:
The invention relates to a method for producing a layer structure comprising a strained layer on a substrate. The inventive method comprises the steps of producing a defect area in a layer adjoining the layer to be strained, and relaxing at least one layer adjoining the layer to be strained. The defect area is especially produced in the substrate. Additional layers can be epitactically grown. Layer structures so produced are especially suitable for producing various types of components.

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patent: 6464780 (2002-10-01), Mantl et al.
patent: 6562703 (2003-05-01), Maa et al.
patent: 6841457 (2005-01-01), Bedell et al.
patent: 7109096 (2006-09-01), Takizawa
patent: 2002/0185686 (2002-12-01), Christiansen et al.
patent: 2004/0238885 (2004-12-01), Bedell et al.
patent: 2006/0220127 (2006-10-01), Mantl
patent: WO 02/071495 (2002-09-01), None
patent: WO 03/092058 (2003-11-01), None
patent: WO 03/098664 (2003-11-01), None
patent: WO 2004/082001 (2004-09-01), None

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