Method for producing a single crystal of a III.sub.b -V.sub.b co

Details Method for producing a single crystal of a III.sub.b -V.sub.b co Method for producing a single crystal of a III.sub.b -V.sub.b co

1982-03-18

1984-11-20

Lacey, David

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG70, C30B 1332

Patent

active

044837364

ABSTRACT:
When the growth of a single crystalline III.sub.b -V.sub.b group compound is carried out employing the horizontal Bridgeman method or the gradient freeze method, it is likely that polycrystals will be grown, crystal defects will form, and the distribution of impurities will not be uniform, especially if the diameter of the single crystal is large. In the present invention, the cooling rate of the melt is controlled in an inconstant manner. Namely, crystal growth is interrupted at least once and/or the cooling rate at an earlier growth period is controlled at a high value. From 40 to 65% of the total melt crystallizes at the time when 30% of the total time required for growth has elapsed. The high yield of a single crystal is attained according to the present invention.

REFERENCES:
patent: 3168423 (1965-02-01), Krieglestein et al.
patent: 3729348 (1973-04-01), Saul
patent: 3893876 (1975-07-01), Akai et al.
patent: 4013501 (1977-03-01), Van Vitert et al.

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