Method for producing a silicon wafer

Details Method for producing a silicon wafer Method for producing a silicon wafer

2004-10-01

2008-11-25

Ahmed, Shamim (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C216S052000, C216S088000, C438S460000, C438S690000, C438S691000, C438S745000

Reexamination Certificate

active

07456106

ABSTRACT:
Provided is a method for producing a silicon wafer whose surfaces exhibit precise flatness and minute surface roughness, and which allows one to visually discriminate between the front and rear surfaces, the method comprising a slicing step of slicing a single-crystal ingot into thin disc-like wafers, a chamfering step of chamfering the wafer, a lapping step for flattening the chamfered wafer, a mild lapping step for abrading away part of processing distortions on the rear surface of the wafer left after chamfering and lapping, a rear-surface mild polishing step for abrading away part of roughness on the rear surface of the wafer, an etching step for alkali-etching the remains of processing distortions on the front and rear surfaces of the wafer, a front-surface mirror-polishing step for mirror-polishing the front surface of the etched wafer, and a cleaning step for cleaning the mirror-polished wafer.

REFERENCES:
patent: 5942445 (1999-08-01), Kato et al.
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patent: 6743698 (2004-06-01), Ushiki et al.
patent: 2001/0039119 (2001-11-01), Kishimoto
patent: 2003/0022495 (2003-01-01), Netsu et al.
patent: 2004/0081805 (2004-04-01), Furihata et al.
patent: 2005/0112893 (2005-05-01), Koyata et al.

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