Method for producing a silicon single crystal and the silicon si

Details Method for producing a silicon single crystal and the silicon si Method for producing a silicon single crystal and the silicon si

1999-03-16

2000-11-28

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 13, 117 14, C30B 1520

Patent

active

061530093

ABSTRACT:
In a Czochralski method for producing a silicon single crystal by growing the crystal, the pulling rate of the single crystal is gradually increased during formation of a tail part after formation of a predetermined or constant diameter part of the single crystal. The length t of the tail part is defined to be a or more, where a represents a distance from the tip end of the tail part to a position of an extraordinary oxygen precipitation area when the tail part is formed after the predetermined or constant diameter part is grown. Productivity and yield of the silicon single crystal are improved by preventing rapid change in temperature while the single crystal is separated from the melt in the tailing process, to suppress generation of an area where the amount of precipitated oxygen is extraordinarily large and an OSF ring due to rapid increase in temperature when the tail part is formed, in the predetermined or constant diameter part near the tail part.

REFERENCES:
patent: 4040895 (1977-08-01), Patrick et al.
patent: 5474020 (1995-12-01), Bell et al.
patent: 5766341 (1998-06-01), Kimbel et al.
patent: 5876495 (1999-03-01), Hiraishi et al.

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