Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-08-19
2000-05-09
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438164, 438412, 438165, 438413, 257352, 257353, 257354, H02L 2120
Patent
active
060603445
ABSTRACT:
In a method for producing a semiconductor substrate completed through a bonding process for joining a semiconductor wafer to a support substrate by performing heat treatment thereto in a state in which the semiconductor wafer is closely joined to the support substrate, the method according to the present invention includes the following steps, i.e., a depositing process for depositing a poly-crystal semiconductor which covers all areas of a surface to be bonded on the surface of the semiconductor wafer; a heat treatment process for performing the heat treatment to the semiconductor wafer provided after the depositing process, during a predetermined time under a temperature equal to or higher than the heat treatment temperature at the bonding process; and a polishing process for flattening the surface of the poly-crystal semiconductor provided after the heat treatment process. After the above processes were performed in order, the bonding process is performed after the polishing process.
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Matsui Masaki
Nagaya Masatake
Ohshima Hisayoshi
Bowers Charles
Denso Corporation
Schillinger Laura
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