Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-01-02
2007-01-02
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S614000
Reexamination Certificate
active
10949386
ABSTRACT:
An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.
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Akihito Tsuda, “Semiconductor Integrated Circuit Device and Manufacture of the Same,” English translation of JP 11-8250 A, JPO, published Jan. 12, 1999.
Inaba Masatoshi
Kaizu Masahiro
Kurosaka Akihito
Masumoto Kenji
Masumoto Mutsumi
Fujikura Ltd.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Smoot Stephen W.
Texas Instruments Japan Limited
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