Method for producing a semiconductor device using a solder...

Details Method for producing a semiconductor device using a solder... Method for producing a semiconductor device using a solder...

2008-06-26

2010-10-19

Parekh, Nitin (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S772000, C257SE23023

Reexamination Certificate

active

07816249

ABSTRACT:
In producing a semiconductor device, a solder alloy is prepared to contain antimony in a range of from 3 to 5 wt %, a trace amount of germanium, and a balance of tin. An insulative substrate having conductor patterns on both surfaces thereof is prepared, and a heat sink plate is mounted on a back surface of the insulative substrate by a soldering process using the solder alloy at a temperature ranging from 310 C.° to 320 C.° in a hydrogen reducing furnace. A semiconductor chip is mounted on a front surface of the insulative substrate.

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