Method for producing a semiconductor device including doping wit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – With current flow along specified crystal axis

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438150, H01L 2184, H01L 27148

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active

061602795

ABSTRACT:
A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an an 100 where lead serving as a crystallization-promoting catalyst is introduced.

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