Method for producing a semiconductor device including...

Details Method for producing a semiconductor device including... Method for producing a semiconductor device including...

2006-02-17

2009-06-30

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S487000, C257S075000, C257SE21471, C257SE21475, C257SE21328

Reexamination Certificate

active

07553778

ABSTRACT:
A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.

REFERENCES:
patent: 6194023 (2001-02-01), Mitsuhashi et al.
patent: 6566683 (2003-05-01), Ogawa et al.
patent: 6717105 (2004-04-01), Okamoto et al.
patent: 6884699 (2005-04-01), Ogawa et al.
patent: 6903368 (2005-06-01), Yamaguchi et al.
patent: 2001/0026835 (2001-10-01), Tanaka
patent: 2001/0036755 (2001-11-01), Tanaka
patent: 2002/0052069 (2002-05-01), Jiroku et al.
patent: 2003/0038122 (2003-02-01), Yamazaki et al.
patent: 2006/0183303 (2006-08-01), Inui et al.
patent: 2007/0141733 (2007-06-01), Shimomura et al.
patent: 1 256 977 (2002-11-01), None
patent: 2001-338873 (2000-12-01), None
patent: 2002-016015 (2000-12-01), None
patent: WO 02/31871 (2002-04-01), None

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