Method for producing a semiconductor device having a semiconduct

Details Method for producing a semiconductor device having a semiconduct Method for producing a semiconductor device having a semiconduct

1995-05-08

1997-08-05

Niebling, John

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438140, 438542, 438931, 438945, 148DIG126, H01L 21265

Patent

active

056542089

ABSTRACT:
The present invention relates to a method for producing a semiconductor device having a semiconductor layer of SiC. The method comprises the steps of a) applying a mask on at least a portion of the SiC layer to coat a first portion of the SiC layer leaving a second portion thereof uncoated, b) applying a heat treatment to the SiC layer, and c) supplying dopants to the SiC layer during the heat treatment for diffusion of the dopants into the SiC layer at the second portion thereof for doping the SiC layer. The mask is made of crystalline AIN as the only component or AIN as a major component of a crystalline alloy constituting the material.

REFERENCES:
patent: 4030942 (1977-06-01), Keenan et al.
patent: 4058413 (1977-11-01), Welch et al.
patent: 5322802 (1994-06-01), Baliga et al.
patent: 5401686 (1995-03-01), Kiyose
patent: 5510281 (1996-04-01), Ghezzo et al.
patent: 5510632 (1996-04-01), Brown et al.
Campbell et al., Electrical Properties of SiC Devices, in Mat. Res. Bull. vol. 4, pp. S 211-S 222, 1969, month unknown.

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