Method for producing a semiconductor device and resulting...

Details Method for producing a semiconductor device and resulting... Method for producing a semiconductor device and resulting...

2006-01-30

2008-10-28

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21507

Reexamination Certificate

active

07442635

ABSTRACT:
The present invention is related to a method of producing a semiconductor device and the resulting device. The method is suitable in the first place for producing high power devices, such as High Electron Mobility Transistors (HEMT), in particular HEMT-devices with multiples source-gate-drain groups or multiple base bipolar transistors. According to the method, the interconnect between the source contacts is not produced by air bridge structures, but by etching vias through the semiconductor layer directly to the ohmic contacts and applying a contact layer on the backside of the device.

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