Method for producing a semiconductor device

Details Method for producing a semiconductor device Method for producing a semiconductor device

1996-04-01

1997-12-23

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

437685, H01L 21285

Patent

active

057007381

ABSTRACT:
In a method and an apparatus for producing a semiconductor device, means is provided for adding an oxidizing gas to an inactive gas to be fed to the sides of a wafer. Before a metal film is formed on the front of the wafer, the oxidizing gas oxidizes silicon exposed on the sides and rear of the wafer and unprotected from a raw material gas, thereby forming a silicon oxide film. Hence, even when the metal film is formed on the front of the wafer via an adhesion layer, it is scarcely formed on the sides and rear of the wafer and turns out a minimum of particles. This prevents the metal film from easily coming off without resorting to a great amount of inactive gas.

REFERENCES:
patent: 5238499 (1993-08-01), van der Ven et al.
patent: 5326725 (1994-07-01), Sherstinsky et al.
patent: 5436200 (1995-07-01), Tanaka

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