Method for producing a semiconductor device

Details Method for producing a semiconductor device Method for producing a semiconductor device

1983-03-17

1984-06-19

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29578, 29580, 148187, 156643, 156656, 156657, 1566591, 156662, 357 41, 357 49, 357 59, 427 88, 427 93, 430317, 430318, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

044551940

ABSTRACT:
A method for producing a semiconductor device provided with a fuse including the steps of forming a fuse layer on an insulating layer formed on a semiconductor substrate, forming an interrupting layer covering the fuse layer and the insulating layer, forming an insulating protective layer covering the interrupting layer, selectively etching the protective layer, so as to form a window, with a suitable etchant which does not etch the interrupting layer, and etching the exposed interrupting layer to complete the window by which a portion of the the fuse layer and a portion of the insulating layer are exposed. The insulating layer is not removed so that the reliability of the semiconductor device will not deteriorate.

REFERENCES:
patent: 4420504 (1983-12-01), Cooper et al.
End Programmable-Memory Directory, "Programmable Memory Choices Expand Design Options", by John Tsantes, Jan. 5, 1980, pp. 81-98.
IEEE Transactions on Electron Devices, "One-Device Cells for Dynamic Random-Access Memories" A Tutorial, by Rideout, vol. Ed 26, No. 6, 6/79, pp. 839-852.
IEEE Journal of Solid-State Circuits, "Laser Programmable Redundancy and Yield Improvement in a 64K DRAM", Smith et al., vol. SC-16, No. 5, 10/81, pp. 506-514.

Affiliated with

Also associated with

Rating

Method for producing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-412902