Method for producing a semiconductor device

Details Method for producing a semiconductor device Method for producing a semiconductor device

1998-02-24

2000-04-04

Gulakowski, Randy

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438715, 438717, 438725, 216 41, 216 46, 216 67, H01L 21311

Patent

active

060461144

ABSTRACT:
A method for producing a semiconductor device comprises forming a film to be etched, an organic antireflective film and a resist mask on a substrate in this order; and before etching the film to be etched, dry-etching the organic antireflective film into a predetermined configuration by use of the resist mask and an etching gas containing chlorine atom and oxygen atom with maintaining the substrate at such a temperature that allows deposition of a substance produced by reaction of the organic antireflective film with chlorine atom contained in the etching gas.

REFERENCES:
patent: 5759755 (1998-06-01), Park et al.

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