Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-16
2005-08-16
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S125000, C438S126000, C438S669000, C257S692000, C257S773000
Reexamination Certificate
active
06930042
ABSTRACT:
A method for producing a semiconductor component includes coating a substrate with a metalization. The metalization is structured in such a way that interconnects are formed at least in an encapsulation region. An encapsulation is applied in the encapsulation region around a previously applied chip. In order to provide sealing during the application of the encapsulation, either the interconnects are structured in such a way that they are interconnected, or a labyrinth structure is formed between the interconnects.
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“Kraftpaket, Tools und Technologie für Chip- und Leiterplattenhersteller”, dated Nov. 4, 1998, Elektronikpraxis No. 21, pp. 60-63.
Berezny Nema
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Stemer Werner H.
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