Method for producing a semiconductor component having a...

Details Method for producing a semiconductor component having a... Method for producing a semiconductor component having a...

2006-11-28

2009-08-11

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

C438S378000

Reexamination Certificate

active

07573122

ABSTRACT:
A method for producing a semiconductor component, and a semiconductor component, having a metallic gate electrode deposited onto a semiconductor layer, with the gate electrode having a gate foot and a gate head. The component is produced by depositing a first layer of aluminum on the semiconductor layer, depositing a second layer of a second metal on the first layer, depositing at least one additional layer (G3) of an additional metal, different from the second metal, on the second layer, and carrying out a temperature treatment at elevated temperature.

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patent: 6686616 (2004-02-01), Allen et al.
patent: 7041541 (2006-05-01), Behammer
patent: 7129182 (2006-10-01), Brask et al.
patent: 2003/0075719 (2003-04-01), Sriram
patent: 10304722 (2004-08-01), None

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