Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2007-11-27
2007-11-27
Hu, Shouxiang (Department: 2811)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S053000, C438S489000, C438S960000
Reexamination Certificate
active
10451775
ABSTRACT:
A method of producing a semiconductor component, e.g., a multilayer semiconductor component, and a semiconductor component produced by this method, where the semiconductor component has, e.g., a mobile mass, i.e., an oscillator structure.A method easily and inexpensively produce a micromechanical component having monocrystalline oscillator structures, such as an acceleration sensor or a rotational rate sensor for example, by surface micromechanics, a first porous layer is formed in the semiconductor component in a first step and a cavity, i.e., a cavern, is formed beneath or out of the first porous layer in the semiconductor component in a second step.
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Benzel Hubert
Schaefer Frank
Weber Heribert
Hu Shouxiang
Kenyon & Kenyon LLP
Robert & Bosch GmbH
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