Method for producing a semiconductor component having a...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation

Reexamination Certificate

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C438S053000, C438S489000, C438S960000

Reexamination Certificate

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10451775

ABSTRACT:
A method of producing a semiconductor component, e.g., a multilayer semiconductor component, and a semiconductor component produced by this method, where the semiconductor component has, e.g., a mobile mass, i.e., an oscillator structure.A method easily and inexpensively produce a micromechanical component having monocrystalline oscillator structures, such as an acceleration sensor or a rotational rate sensor for example, by surface micromechanics, a first porous layer is formed in the semiconductor component in a first step and a cavity, i.e., a cavern, is formed beneath or out of the first porous layer in the semiconductor component in a second step.

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G. Lammel, “Free-Standing, Mobile 3D Porous Silicon Microstructures,” sensors and Actuators 85 (2000) 356-360, Swiss Federal Institute of Technology, Lausanne (EPFL), Institute of Microsystems, CH-1015, Lausanne, Switzerland, accepted Dec. 21, 1999.

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