Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-21
2008-10-07
Pham, Thanh V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S192000, C257S327000, C257S330000, C257S396000, C257S401000, C257SE29135, C438S182000
Reexamination Certificate
active
07432563
ABSTRACT:
A method for producing a gate head which can be precisely scaled and for reducing parasitic capacities, for a semiconductor component comprising an at least approximately T-shaped electrode.
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International search Report (enclosed).
Collard & Roe P.C.
Pham Thanh V
United Monolithic Semiconductors GmbH
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