Method for producing a semiconductor component and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S192000, C257S327000, C257S330000, C257S396000, C257S401000, C257SE29135, C438S182000

Reexamination Certificate

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07432563

ABSTRACT:
A method for producing a gate head which can be precisely scaled and for reducing parasitic capacities, for a semiconductor component comprising an at least approximately T-shaped electrode.

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International search Report (enclosed).

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