Method for producing a semiconductor component, and...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S666000, C438S672000, C438S043000, C438S589000, C438S508000

Reexamination Certificate

active

07041541

ABSTRACT:
A method for producing a gate head which can be precisely scaled and for reducing parasitic capacities, for a semiconductor component comprising an at least approximately T-shaped electrode.

REFERENCES:
patent: 5139968 (1992-08-01), Hayase et al.
patent: 5155053 (1992-10-01), Atkinson
patent: 5240869 (1993-08-01), Nakatani
patent: 5304511 (1994-04-01), Sakai
patent: 5399896 (1995-03-01), Oku
patent: 5585289 (1996-12-01), Kitano
patent: 5960269 (1999-09-01), Kuesters et al.
patent: 6274893 (2001-08-01), Igarashi et al.
patent: 6294802 (2001-09-01), Unozawa
patent: 6307245 (2001-10-01), Kunii et al.
patent: 6686616 (2004-02-01), Allen et al.
patent: 2001/0022643 (2001-09-01), Kim et al.
patent: 4334427 (1994-04-01), None
patent: 19533291 (1996-03-01), None
patent: 19548058 (1997-06-01), None
patent: 0370428 (1990-05-01), None
patent: 0591608 (1994-04-01), None
patent: 1096557 (2001-05-01), None
patent: 1249862 (2002-10-01), None
patent: 2758207 (1998-07-01), None
patent: 11074348 (1999-03-01), None
patent: 2001274377 (2001-10-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for producing a semiconductor component, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a semiconductor component, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a semiconductor component, and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3651789

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.