Method for producing a resist structure on a semiconductor

Details Method for producing a resist structure on a semiconductor Method for producing a resist structure on a semiconductor

1989-07-26

1990-12-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437981, 437229, H01L 21465

Patent

active

049803166

ABSTRACT:
A method for producing a resist structure on a semiconductor material which has an opening tapering towards the semiconductor material is provided. This method can be used, for example, for the manufacturing of T-gate metallizations in a field effect transistor. In this method, a thin, upper resist layer is structured, and the structure is transferred onto a silicon nitride layer. The structure is then transferred into a thickly applied resist while widening the upper part of the etching profile. The method is accomplished by a succession of anisotropic and isotropic dry etching steps.

REFERENCES:
patent: 4372034 (1983-02-01), Bohr
patent: 4440804 (1984-04-01), Milgram
patent: 4495220 (1985-01-01), Wolf et al.
patent: 4522681 (1985-06-01), Gorowitz et al.
patent: 4523976 (1985-06-01), Bukhman
patent: 4560436 (1985-12-01), Bukhman et al.
"VLSI Fabrication Principles", Sorab K. Ghandhi, 1983, pp. 499-510.

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