Method for producing a polished semiconductor

Details Method for producing a polished semiconductor Method for producing a polished semiconductor

2007-05-04

2010-11-09

Olsen, Allan (Department: 1716)

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

C257SE21219, C257SE21230, C438S706000

Reexamination Certificate

active

07829467

ABSTRACT:
Semiconductor wafers are cut from a crystal and subjected to a series of processing steps in which material is removed from a front side and a rear side of the semiconductor wafers, comprising the following processing steps:a mechanical processing step,an etching step in which the semiconductor wafers are oxidized and material is removed from the front side of the wafers with the aid of a gaseous etchant containing hydrofluoric acid at a temperature of 20 to 70° C., and a polishing step in which the front side of the semiconductor wafer is polished, the processing steps in which the front side of the semiconductor wafer is polished causing material removal which does not amount to more than 5 μm in total.

REFERENCES:
patent: 5429711 (1995-07-01), Watanabe et al.
patent: 5948699 (1999-09-01), Lawrence et al.
patent: 5980720 (1999-11-01), Park et al.
patent: 5998281 (1999-12-01), Aga et al.
patent: 6013564 (2000-01-01), Muramatsu
patent: 6074947 (2000-06-01), Mumola
patent: 6114245 (2000-09-01), Vandamme et al.
patent: 6214704 (2001-04-01), Xin
patent: 6376335 (2002-04-01), Zhang et al.
patent: 6376395 (2002-04-01), Vasat et al.
patent: 6491836 (2002-12-01), Kato et al.
patent: 6566267 (2003-05-01), Wenski
patent: 6861360 (2005-03-01), Wenski et al.
patent: 7250368 (2007-07-01), Kida et al.
patent: 7416962 (2008-08-01), Harrison et al.
patent: 7510664 (2009-03-01), Carr
patent: 2001/0014570 (2001-08-01), Wenski et al.
patent: 2001/0039101 (2001-11-01), Wenski
patent: 2002/0004305 (2002-01-01), Vasat et al.
patent: 2002/0174828 (2002-11-01), Vasat et al.
patent: 2003/0008478 (2003-01-01), Abe et al.
patent: 2003/0068891 (2003-04-01), Bang et al.
patent: 2003/0109139 (2003-06-01), Wenski et al.
patent: 2003/0186028 (2003-10-01), Wenski et al.
patent: 2004/0020513 (2004-02-01), Bergman
patent: 2004/0035448 (2004-02-01), Aegerter et al.
patent: 2007/0202660 (2007-08-01), Moriceau et al.
patent: 2007/0259531 (2007-11-01), Stadler et al.
patent: 102 10 023 (2003-05-01), None
patent: 10 2004 062 355 (2006-07-01), None
Derwent Abstract of DE 102 10 023 A1, (2003).
US 2004/0020513 is the English translation of DE 10 2004 062 355 A1.

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