Method for producing a pn-junction for a semiconductor device of

Details Method for producing a pn-junction for a semiconductor device of Method for producing a pn-junction for a semiconductor device of

1998-09-03

2000-07-04

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438931, H01L 21265

Patent

active

060838140

ABSTRACT:
A method for producing a pn-junction for a semiconductor device of SiC intended to have at least one lateral zone of junction termination with a lower doping concentration of a first conductivity type than a main zone for smearing out the electrical field at said junction comprising at least the step of applying a first layer of SiC over the entire surface and on top of a second layer of SiC. A mask is applied on the first layer over a portion thereof where said main zone and an ohmic contact are to be formed. It is after that etched through the first layer to the second layer while leaving a main zone of said first layer and a contact layer thereof under said mask.

REFERENCES:
patent: 4947218 (1990-08-01), Edmond et al.

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