Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2007-10-25
2010-10-26
Rosasco, S. (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S296000, C430S311000, C430S312000, C430S394000
Reexamination Certificate
active
07820343
ABSTRACT:
Methods for producing a photomask or layer or stack patterning include applying two resists to a layer, a layer stack, or a mask substrate (collectively “the layer”). Sensitivity of the first resist with respect to the exposure dose is greater than sensitivity of the second. Both resists are subjected to an exposure dose in defined regions of the layer surface, the dose varying locally between first and second doses. The first dose is chosen to expose the first resist but not the second. The second dose is chosen to expose the second resist. After a first development of the second and of the first resist the layer is etched at the uncovered locations for a first time. After complete removal of the second resist and a second development of the first resist, the layer is etched. As a result, it is possible to produce structures of different depths in the layer.
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Eric S. Ainley, Scott Ageno, Kevin J. Nordquist, and Douglas J. Resnick, “Sub-100 nm T-gates utilizing a single E-beam lithography exposure process,” Jul. 2002, Proc. SPIE 4690, pp. 1150-1156.
Feicke Axel
Waiblinger Markus
Wandel Timo
Advanced Mask Technology Center GmbH & Co. KG
Jelsma Jonathan
Mayback Gregory L.
Mayback & Hoffman P.A.
Rosasco S.
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