Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-09-30
1998-12-22
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438300, 438368, H01L 2100, H01L 21336
Patent
active
058518584
ABSTRACT:
A method for producing a multiplicity of microelectronic circuits on SOI produces n-CMOS or p-CMOS transistors, NPN transistors or PNP transistors, for instance, through the use of a standardized process, in an especially simple way. All that is required to do so is to adapt the implantations that are performed.
REFERENCES:
patent: 4276688 (1981-07-01), Hsu
patent: 5164326 (1992-11-01), Foerstner
patent: 5389561 (1995-02-01), Gomi
patent: 5545579 (1996-08-01), Liang
Greenberg Laurence A.
Lebentritt Michael S.
Lerner Herbert L.
Niebling John
Siemens Aktiengesellschaft
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