Method for producing a monolithically integrated optoelectronic

Details Method for producing a monolithically integrated optoelectronic Method for producing a monolithically integrated optoelectronic

1987-10-26

1991-03-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG51, 148DIG111, 148DIG161, 156662, 357 41, 437 59, 437 90, 437129, 437904, 437947, H01L 2170, H01L 2120

Patent

active

050010808

ABSTRACT:
A semiconductor device including a substrate having a low substrate surface formed in the substrate with a first gentle slope from the substrate surface; a single crystalline layer formed on the low substrate surface nearly level with the substrate surface and having a gentle slope facing the first gentle slope; an optical semiconductor element is constructed using the single crystalline layer. An electronic semiconductor element is constructed using the substrate surface. A wiring layer connects electrodes of the optical semiconductor element and the electronic semiconductor element through the first and the second gentle slopes.

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