Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2002-07-03
2003-11-11
Quach, T. N. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S417000
Reexamination Certificate
active
06646314
ABSTRACT:
BACKGROUND INFORMATION
Methods for producing a micromechanical structure or micromechanical structures are already known, in which a movable silicon structure and a stationary silicon structure are provided which are movable relative to one another.
SUMMARY OF THE INVENTION
The method according to the present invention for producing a micromechanical structure, and the micromechanical structure of the present invention have the advantage that superficial, conductive metal-silicide layers are provided. Electrostatic surface charges on the micromechanical structures can be prevented by these conductive metal-silicide layers. Adhesion of the micromechanical structures to one another is thereby also reduced.
The metals indicated are especially suitable for forming metal-silicide layers. Both polycrystalline and monocrystalline silicon is suitable as material for the structures. The method can be used particularly easily in connection with producing silicon structures on sacrificial layers, particularly on a support.
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Kenyon & Kenyon
Quach T. N.
Robert & Bosch GmbH
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