Method for producing a micromechanical component having a...

Details Method for producing a micromechanical component having a... Method for producing a micromechanical component having a...

2007-08-21

2010-12-14

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S694000, C438S706000, C438S735000, C257SE21222

Reexamination Certificate

active

07851248

ABSTRACT:
A capping technology is provided in which, despite the fact that structures which are surrounded by a silicon-germanium filling layer are exposed using ClF3etching through micropores in the silicon cap, an etching attack on the silicon cap is prevented, namely, either by particularly selective (approximately 10,000:1 or higher) adjustment of the etching process itself, or by using the finding that the oxide of a germanium-rich layer, in contrast to oxidized porous silicon, is not stable but instead may be easily dissolved, to protect the silicon cap.

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patent: 102004036803 (2006-03-01), None
patent: WO 2006/081636 (2006-08-01), None
International Search Report, PCT International Application No. PCT/EP2007/058684, dated Dec. 3, 2007.

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