Method for producing a microelectronic integrated cantilever

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

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438 48, 438 50, 257758, 7351436, 156643, H01L 2100

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active

061366315

ABSTRACT:
A microelectronic integrated sensor is formed with a cantilever. For the purpose of ensuring a system which is especially invulnerable to mechanical strains during production, the cantilever is placed freely movably on a support, and motion limiters are provided on the edge. The invention also provides for the formation of nitride pillars for supporting the upper layers, in order to further increase the stability. A corresponding production process for producing the sensor is disclosed as well.

REFERENCES:
patent: 4882933 (1989-11-01), Petersen et al.
patent: 5006487 (1991-04-01), Stokes
patent: 5181156 (1993-01-01), Gutteridge et al.
patent: 5262000 (1993-11-01), Welbourn et al.
patent: 5429993 (1995-07-01), Beitman
patent: 5510290 (1996-04-01), Kwon
patent: 5559290 (1996-09-01), Suzuki et al.
patent: 5587343 (1996-12-01), Kano et al.
patent: 5604313 (1997-02-01), Cahill et al.
patent: 5611940 (1997-03-01), Zettler
patent: 5784212 (1998-07-01), Hornbeck
patent: 5834332 (1998-11-01), Hierold et al.
patent: 5861673 (1999-01-01), Yoo et al.
patent: 5930777 (1998-11-01), Ishida et al.

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