Method for producing a Group III-V compound semiconductor

Details Method for producing a Group III-V compound semiconductor Method for producing a Group III-V compound semiconductor

2005-05-27

2010-02-09

Tran, Thien F (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S604000

Reexamination Certificate

active

07659190

ABSTRACT:
A Group III-V compound semiconductor includes, at least, a substrate, a buffer layer of the general formula InuGavAlwN (wherein, 0≦u≦1, 0≦v≦1, 0≦w≦1, u+v+w=1) and a Group III-V compound semiconductor crystal layer of the general formula InxGayAlzN (wherein, 0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1), in this order, wherein the buffer layer has a thickness of at least about 5 Å and not more than about 90 Å. A method is provided for producing the Group III-V compound semiconductor, including forming a buffer layer of the general formula InuGavAlwN on a substrate to give a thickness of at least about 5 Å and not more than about 90 Å at temperatures lower than the growing temperature of the compound semiconductor crystal layer before growing the compound semiconductor crystal layer, and then growing a Group III-V compound semiconductor crystal layer of the general formula InxGayAlzN on the buffer layer.

REFERENCES:
patent: 5122845 (1992-06-01), Manabe et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5587014 (1996-12-01), Iyechika et al.
patent: 5815520 (1998-09-01), Furushima
patent: 2001/0010941 (2001-08-01), Morita
patent: 2-229476 (1990-09-01), None
patent: 4-297023 (1992-10-01), None
patent: 9-148626 (1997-06-01), None
patent: 2002-161000 (2002-06-01), None
Kimura, R., et al., “Molecular Beam Epitaxial Growth of GaN on (0001) AI2O3Using an Ultrathin Amorphous Buffer Layer Deposited at Low Temperature”,Jpn. J. Appl. Phys., vol. 30, pp. 1039-1043 (2000).

Affiliated with

Also associated with

Rating

Method for producing a Group III-V compound semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a Group III-V compound semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a Group III-V compound semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4191235