Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-28
2011-11-01
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257SE29165
Reexamination Certificate
active
08049264
ABSTRACT:
Method for producing a dielectric material on a semiconductor device and semiconductor deviceMethod for producing a dielectric material on semiconductor device with an atomic layer deposition procedure, whereby an aluminum oxide nitride or a silicon oxide nitride or an aluminum silicon oxide nitride layer is deposited comprising a rare earth metal-element.The invention describes a semiconductor device with a dielectric layer comprising aluminum oxide nitride or silicon oxide nitride or an aluminum silicon oxide nitride comprising a rare earth metal element.
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Govindarajan Shrinivas
Gutsche Martin
Seidl Harald
Jiang Fang-Xing
Patterson & Sheridan LLP
Qimonda AG
Warren Matthew E
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