Method for producing a device having an insulator sandwiched bet

Details Method for producing a device having an insulator sandwiched bet Method for producing a device having an insulator sandwiched bet

1992-02-20

1993-11-02

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156657, 156646, 437195, 437191, 437228, H01L 2100

Patent

active

052580954

ABSTRACT:
With the method for producing EPROMs based on selfalignment using a gate electrode as the mask for impurity ion doping, when selectively removing an oxide film between the control gate electrode and the floating gate electrode, the side surface of control gate electrode can be formed flat without projected and recessed areas by removing a thin film deposited at random on the side surface of the upper control gate electrode. Thus, the desired channel region width can be formed, even when impurity ions are doped, with the gate electrode used as the self-alignment mask. Controllability of EPROM production can, therefore, be remarkably improved.

REFERENCES:
patent: 4808259 (1989-02-01), Jille, Jr. et al.

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