Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-11-25
1999-11-09
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438653, 438656, 438660, H01L 2144
Patent
active
059813890
ABSTRACT:
Chromium layers are deposited on a substrate by means of a sputter deposition process. By using neon as the working gas at pressures of less than 1 Pa, preferably in the range from 0.2 Pa to 0.5 Pa, the sputter-deposited chromium layers are substantially free of internal stress and have a density which is approximately equal to that of bulk chromium.
REFERENCES:
patent: 5084412 (1992-01-01), Nakasaki
patent: 5288658 (1994-02-01), Ishihara
patent: 5656098 (1997-08-01), Ishikawa et al.
patent: 5672243 (1997-09-01), Hsia et al.
patent: 5709938 (1998-01-01), Finley et al.
patent: 5751016 (1998-05-01), Vink et al.
patent: 5883398 (1997-11-01), Vink et al.
Vink Teunis J.
Walrave Willem
Berry Renee R.
Fox John C.
Nguyen Tuan H.
U.S. Philips Corporation
LandOfFree
Method for producing a device having a chromium layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing a device having a chromium layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a device having a chromium layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1455440